0.5x geo Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified.

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NPN-Silizium-Fototransistor mit ageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 31 F Vorläufige Daten / Preliminary Data Emitter/ Cathode R.9 R x45
NPN-Silizium-Fototransistor mit ageslichtsperrfilter Silicon NPN Phototransistor with Daylight-Cutoff Filter SFH 31 F Vorläufige Daten / Preliminary Data Emitter/ Cathode R.9 R x geo6976 GEO6976 feo6976 Maβe in mm, wenn nicht anders angegeben/dimensions in mm, unless otherwise specified. Wesentliche Merkmale Speziell geeignet für nwendungen im Bereich von 84 nm bis 18 nm Enge Empfangscharakteristik Geringe ußenabmessungen Gleiche Bauform wie IRED SFH 411 Hoher Koppelfaktor in Lichtschranken mit SFH 411 IR-Filter Leichte Unterscheidbarkeit zwischen SFH 31 F (schwarzes Gehäuse) und SFH 411 (klares Gehäuse) nwendungen Empfänger in Lichtschranken Bandende-Erkennung (z.b. Videorecorder) Datenübertragung Positionsüberwachung Barcode-Leser Messen/Steuern/Regeln Münzzähler Features Especially suitable for applications from 84 nm to 18 nm Narrow half angle Small outline dimensions Same package as IRED SFH 411 High coupling factor in light barriers with SFH 411 IR filter Easy identification of SFH 31 F (black package) and SFH 411 (clear package) pplications Detector in photointerrupters ape end detection Data transmission Position sensing Barcode reader For control and drive circuits Coin counters Semiconductor Group SFH 31 F yp ype Grenzwerte Maximum Ratings Bestellnummer Ordering Code Gehäuse Package SFH 31 F Q6272-P573 Schwarz eingefärbtes Miniatur-Kunststoffgehäuse, nschlüsse im 2,54-mm Raster, Emitter-Kennzeichnung: kurzer nschluß Black-colored miniature plastic package, solder tabs 2.54-mm ( 1 / 1 ), emitter marking: short lead Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektor-Emitterspannung, t 2 min Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, t p 1 µs Collector surge current Emitter-Kollektorspannung Emitter-collector voltage Verlustleistung, = 25 C otal power dissipation Wärmewiderstand Sperrschicht - Umgebung hermal resistance junction - ambient op ; stg C V 3 V V 7 V I C 5 m I CS 1 m V EC 7 V P tot 15 mw R thj 28 K/W Semiconductor Group SFH 31 F Kennwerte ( = 25 C) Characteristics Wellenlänge der max. Fotoempfindlichkeit Wavelength of max. sensitivity Spektraler Bereich der Fotoempfindlichkeit S = 1% von S max Spectral range of sensitivity S = 1% of S max bmessung der Chipfläche Dimensions of chip area Halbwinkel Half angle Kapazität Capacitance V = V, f = 1 MHz, E = V = 5 V, f = 1 MHz, E = Dunkelstrom, V = 2 V λ S max 92 nm λ nm L B L W 1 1 mm mm ϕ ± 14 Grad deg. C pf I O 2 ( 5) n Semiconductor Group SFH 31 F Die Fototransistoren werden nach ihrer Fotoempfindlichkeit gruppiert und mit arabischen Ziffern gekennzeichnet. he phototransistors are grouped according to their spectral sensitivity and distinguished by arabian figures. Fotostrom, λ = 95 nm Photocurrent E e =.5 mw/cm 2, V = 5 V * ) nstiegs-/bfallzeit Rise and fall time I C = 1 m, V CC = 5 V, R L = 1 kω Kollektor-Emitter-Sättigungsspannung Collector-emitter saturation voltage I C = I Pmin.3, E e =.5 mw/cm 2, λ = 95 nm I Pmin ist der minimale Fotostrom der jeweiligen Gruppe I Pmin is the min. photocurrent of the specified group * ) Sonderselektion auf nfrage * ) Special bin selection on request I P .25 m t r 7 t f 9 µs V sat 11 ( 4) mv Semiconductor Group SFH 31 F Rel. spectral sensitivity S rel = f (λ) S rel 1 % OHF377 Photocurrent I P = f (E e ), V = 5 V 1 1 m P OHF378 Collector-emitter capacitance C = f (V ), f = 1 MHz, E = 7 C pf OHF nm 11 λ mw/cm 1 E e V 1 2 V Photocurrent I P = f ( ), V = 5 V, normalized to 25 C I O = f ( ), V = 2 V, E = otal power dissipation P tot = f ( ) P P25 OHF n O OHF38 16 P mw tot 14 OHF C C C 1 Photocurrent SFH 31F I P = f (V ) P 2. m OHF mw/cm 2.5 mw/cm 2.25 mw/cm 2.1 mw/cm 2 I O = f (V ), E = 1 1 n O OHF V 4 V V 3 V Semiconductor Group
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