HEF4752VP

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HEF4752VP
  D T SHEET Product specificationFile under Integrated Circuits, IC04January 1995 INTEGRATED CIRCUITS  HEF4752VLSI A.C. motor control circuit For a complete data sheet, please also download: ã The IC04 LOCMOS HE4000B LogicFamily Specifications HEF, HEC ã The IC04 LOCMOS HE4000B LogicPackage Outlines/Information HEF, HEC  January 19952 Philips SemiconductorsProduct specification A.C. motor control circuitHEF4752VLSI DESCRIPTION The HEF4752V is a circuit for a.c. motor speed controlutilizing LOCMOS technology. The circuit synthesizesthree 120 ° out of phase signals, of which the averagevoltage varies sinusoidally with time in the frequencyrange 0 to 200 Hz. The method employed is based uponthe pulse width modulation principle, in order to achieve asufficient accuracy of the output voltages over the wholefrequency range. A pure digital waveform generation isused.All outputs are of the push-pull type. Inputs and outputs areprotected against electrostatic effects in a wide variety ofdevice-handling situations. However, to be totally safe, it isdesirable to take handling precautions into account.Fig.1 Pinningdiagram. PINNINGInputs; group IInputs; group IIOutputs; group IOutputs; group IISUPPLY VOLTAGE 24=Ldata25=Idata7=Kdata5=CWdata13=Adata15=Bdata16=Cdata12=FCTfrequency clock17=VCTvoltage clock4=RCTreference clock6=OCToutput delayclock23=RSYNR-phase synchronization26=VAVaverage voltage18=CSPcurrent sampling pulses8=ORM1R-phase main9=ORM2R-phase main10=ORC1R-phase commutation11=ORC2R-phase commutation22=OYM1Y-phase main21=OYM2Y-phase main20=OYC1Y-phase commutation19=OYC2Y-phase commutation3=OBM1B-phase main2=OBM2B-phase main1=OBC1B-phase commutation27=OBC2B-phase commutation RATINGRECOMMENDEDOPERATING HEF4752V  − 0,5 to 184,5 to 12,5 V  January 19953Philips SemiconductorsProduct specification A.C. motor control circuitHEF4752VLSI FAMILY DATA See Family SpecificationsHEF4752VP(N):28-lead DIL; plastic (SOT117-2)HEF4752VD(F):28-lead DIL; ceramic (cerdip) (SOT135)(): Package Designator North America   J  an u ar  y 1  9  9  5 4 P h i  l  i   p s  S  emi   c  on d  u c  t   or  s P r  o d  u c  t   s  p e c i  fi  c  a t  i   on A . C .m o t   or  c  on t  r  ol    c i  r  c  ui   t  H E F 4 7  5 2 V L  S I   DC CHARACTERISTICS V SS =0 V PARAMETERV DD VSYMBOLT amb ( ° C)UNITCONDITIONS − 40  + 25  + 85MIN.MAX.MIN.MAX.MIN.MAX. Quiescent device current5I DD − 50  − 50  − 375  µ Aall valid input combinations;10  − 100  − 100  − 750  µ AV I =V SS or V DD Input leakage current10  ± I IN  − − − 0,3  − 1  µ AV I =0 or 10 VInput voltage HIGH5V IH 3,5  − 3,5  − 3,5  − Vinputs: group I107,0  − 7,0  − 7,0  − VInput voltage LOW5V IL − 1,5  − 1,5  − 1,5Vinputs: group I10  − 3,0  − 3,0  − 3,0VOutput voltage HIGH5V OH 4,95  − 4,95  − 4,95  − VV I =V SS or V DD ;   I O  < 1  µ A109,95  − 9,95  − 9,95  − VOutput voltage LOW5V OL − 0,05  − 0,05  − 0,05VV I =V SS or V DD ;   I O  < 1  µ A10  − 0,05  − 0,05  − 0,05VInput tripping level;5V ti 1,54,01,54,01,54,0Vinputs: group IIinput voltage increasing103,08,03,08,03,08,0VInput tripping level;5V td 1,03,51,03,51,03,5Vinputs: group IIinput voltage decreasing102,07,02,07,02,07,0VOutput current LOW5I OL 0,45  − 0,38  − 0,3  − mAV OL =0,4 Voutputs: groups I and II101,4  − 1,17  − 0,9  − mAV OL =0,5 VOutput current HIGH5 − I OH 0,3  − 0,25  − 0,2  − mAV OH =4,6 Voutputs: group I100,9  − 0,75  − 0,6  − mAV OH =9,5 VOutput current HIGH5  − I OH 0,9  − 0,75  − 0,6  − mAV OH =2,5 Voutputs: group IOutput current HIGH5 − I OH 0,6  − 0,5  − 0,4  − mAV OH =4,6 Voutputs: groups II101,8  − 1,5  − 1,2  − mAV OH =9,5 VOutput current HIGH5  − I OH 1,8  − 1,5  − 1,2  − mAV OH =2,5 Voutputs: group IITotal supply current10I tot  − − typ. 2  − − − mAI OL =I OH =0; frequency applied toinputs; FCT=700 kHz; VCT=400 kHz;RCT=400 kHz
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